標題: Investigation of InGaN/GaN light emitting diodes with nano-roughened surface by excimer laser etching method
作者: Huang, Hung-Wen
Kao, Chih-Chiang
Chu, Jung-Tang
Wang, Wei-Chih
Lu, Tien-Chang
Kuo, Hao-Chung
Wang, Shing-Chung
Yu, Chang-Chin
Kuo, Shou-Yi
光電工程學系
Department of Photonics
關鍵字: gallium nitride (GaN);light emitting diode (LED);laser etching
公開日期: 25-Jan-2007
摘要: The InGaN/GaN light emitting diodes (LEDs) with a nano-roughened top p-GaN surface fabricated by using Ni nano-masks and laser etching methods were demonstrated and analyzed. The experiment results observed the maximum light output power of the InGaN/GaN LED with a nano-roughened top p-GaN surface etched with the laser energy of 300 mJ/cm(2) was 1.55 times higher than that of a conventional LED, and the wall-plug efficiency was enhanced 68% at 20 mA. The series resistance of InGaN/GaN LED was reduced by 32% by the increase in the contact area of the nano-roughened surface. (c) 2006 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.mseb.2006.09.030
http://hdl.handle.net/11536/11217
ISSN: 0921-5107
DOI: 10.1016/j.mseb.2006.09.030
期刊: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
Volume: 136
Issue: 2-3
起始頁: 182
結束頁: 186
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