標題: Growth of very-high-mobility AlGaSb/InAs high-electron-mobility transistor structure on si substrate for high speed electronic applications
作者: Lin, Y. C.
Yamaguchi, H.
Chang, E. Y.
Hsieh, Y. C.
Ueki, M.
Hirayama, Y.
Chang, C. Y.
材料科學與工程學系
電子工程學系及電子研究所
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
公開日期: 8-Jan-2007
摘要: The growth of the AlGaSb/InAs high-electron-mobility transistor (HEMT ) epitaxial structure on the Si substrate is investigated. Buffer layers consisted of UHV/chemical vapor deposited grown Ge/GeSi and molecular beam epitaxy-grown AlGaSb/AlSb/GaAs were used to accommodate the strain induced by the large lattice mismatch between the AlGaSb/InAs HEMT structure and the Si substrate. The crystalline quality of the structure grown was examined by x-ray diffraction, transmission electron microscopy, and atomic force microscopy. Finally, very high room-temperature electron mobility of 27 300 cm(2) /V s was achieved. It is demonstrated that a very-high-mobility AlGaSb/InAs HEMT structure on the Si substrate can be achieved with the properly designed buffer layers. (c) 2007 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2431567
http://hdl.handle.net/11536/11236
ISSN: 0003-6951
DOI: 10.1063/1.2431567
期刊: APPLIED PHYSICS LETTERS
Volume: 90
Issue: 2
結束頁: 
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