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dc.contributor.authorChang, Wen-Tungen_US
dc.contributor.authorHsieh, Tsung-Eongen_US
dc.contributor.authorZimmermann, Gunnaren_US
dc.contributor.authorWang, Larsen_US
dc.date.accessioned2014-12-08T15:15:02Z-
dc.date.available2014-12-08T15:15:02Z-
dc.date.issued2007-01-01en_US
dc.identifier.issn1071-1023en_US
dc.identifier.urihttp://dx.doi.org/10.1116/1.2433966en_US
dc.identifier.urihttp://hdl.handle.net/11536/11305-
dc.description.abstractNanoprobing was used to analyze the soft cell failure of submicron static random access memory (SRAM) at cell level by means of a Zyvex S 100 nanomanipulator system inside a scanning electron microscopy and a multiprobe atomic force probe system, respectively. For the 256 Kbyte dual-port SRAM block, the failure areas exhibit very weak positive-channel field effect transistor drain currents of several magnitudes below the target values, while the drain currents of negative-channel field effect transistor cell transistors are in the expected range. A junction delineation or junction stain was applied to transmission electron microscopy samples to delineate areas with different doping levels so as to make the fail sites visible. Due to the difference in etching behavior of the fail and a reference area, missing lightly doped drain extensions and a partially blocked source/drain implantation were identified as the failure mechanisms. (c) 2007 American Vacuum Society.en_US
dc.language.isoen_USen_US
dc.titleAdvance static random access memory soft fall analysis using nanoprobing and junction delineation transmission electron microscopyen_US
dc.typeArticleen_US
dc.identifier.doi10.1116/1.2433966en_US
dc.identifier.journalJOURNAL OF VACUUM SCIENCE & TECHNOLOGY Ben_US
dc.citation.volume25en_US
dc.citation.issue1en_US
dc.citation.spage202en_US
dc.citation.epage207en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000244512400038-
dc.citation.woscount3-
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