Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Chiang, K. C. | en_US |
| dc.contributor.author | Huang, C. C. | en_US |
| dc.contributor.author | Pan, H. C. | en_US |
| dc.contributor.author | Hsiao, C. N. | en_US |
| dc.contributor.author | Lin, J. W. | en_US |
| dc.contributor.author | Hsieh, I. J. | en_US |
| dc.contributor.author | Cheng, C. H. | en_US |
| dc.contributor.author | Chou, C. P. | en_US |
| dc.contributor.author | Chin, A. | en_US |
| dc.contributor.author | Hwang, H. L. | en_US |
| dc.contributor.author | McAlister, S. P. | en_US |
| dc.date.accessioned | 2014-12-08T15:15:03Z | - |
| dc.date.available | 2014-12-08T15:15:03Z | - |
| dc.date.issued | 2007 | en_US |
| dc.identifier.issn | 0013-4651 | en_US |
| dc.identifier.uri | http://hdl.handle.net/11536/11329 | - |
| dc.identifier.uri | http://dx.doi.org/10.1149/1.2422874 | en_US |
| dc.description.abstract | An unavoidable drawback when using high-kappa dielectrics in capacitors is the small bandgap and the related reduction in the band-offset, which results in a large leakage current at elevated temperatures. We report improvements in the thermal leakage current by using Ni as a high-work-function top electrode for high-kappa TiHfO capacitors. This avoids sacrificing the overall kappa value by using a multilayer or laminate structure and results in better voltage linearity, which is important for analog/radio frequency integrated circuits. (c) 2007 The Electrochemical Society. | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | Thermal leakage improvement by using a high-work-function ni electrode in high-kappa TiHfO metal-insulator-metal capacitors | en_US |
| dc.type | Article | en_US |
| dc.identifier.doi | 10.1149/1.2422874 | en_US |
| dc.identifier.journal | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | en_US |
| dc.citation.volume | 154 | en_US |
| dc.citation.issue | 3 | en_US |
| dc.citation.spage | G54 | en_US |
| dc.citation.epage | G57 | en_US |
| dc.contributor.department | 機械工程學系 | zh_TW |
| dc.contributor.department | 奈米科技中心 | zh_TW |
| dc.contributor.department | Department of Mechanical Engineering | en_US |
| dc.contributor.department | Center for Nanoscience and Technology | en_US |
| dc.identifier.wosnumber | WOS:000243977500052 | - |
| dc.citation.woscount | 20 | - |
| Appears in Collections: | Articles | |
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