標題: Properties of Pt/SrBi2Ta2O9/BL/Si MFIS structures containing HfO2, SiO2, and Si3N4 buffer layers
作者: Leu, Ching-Chich
Leu, Chia-Feng
Chien, Chao-Hsin
Yang, Ming-Jui
Huang, Rui-Hao
Lin, Chen-Han
Hsu, Fan-Yi
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2007
摘要: The physical and electrical properties of Pt/SrBi2Ta2O9 (SBT)/buffer layer (BL)/Si metal/ferroelectric/insulator/semiconductor (MFIS) structures incorporating HfO2, SiO2, and Si2N4 as buffer layers were investigated. When employing HfO2 as the buffer layer, an MFIS structure exhibiting a high memory ratio was constructed, presumably because of the SBT characteristics and the high quality of the HfO2 layer on the Si substrate. This study demonstrates that HfO2 is one of the best buffer-layer materials for ferroelectric memory applications. (c) 2007 The Electrochemical Society.
URI: http://hdl.handle.net/11536/11350
http://dx.doi.org/10.1149/1.2710176
ISSN: 1099-0062
DOI: 10.1149/1.2710176
期刊: ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume: 10
Issue: 5
起始頁: G25
結束頁: G28
Appears in Collections:Articles