Effect of the silver mirror location on the luminance intensity of double-roughened GaN light-emitting diodes

Abstract

Three kinds of GaN light-emitting diodes (LEDs) were used to investigate the effect of the silver (Ag) mirror location on the performance of LEDs. Samples designated as "PR-LED" were LEDs with roughened p-GaN surface. "DRM-LED" and "DRSM-LED" were LEDs with double-roughened (p-GaN and undoped-GaN) surfaces and a Ag mirror system either at the undopedGaN/sapphire interface or on the back side of sapphire substrate. It was found that the light intensity of DRM-LED was 235.8 mcd, which was 3.05 times higher than that of the PR-LED, and 1.45 times higher than that of the DRSM-LED. (c) 2007 The Electrochemical Society.