Analysis of parasitic resistance and channel sheet conductance of a-Si : H TFT under mechanical bending

Abstract

The effect of mechanical strain on the performance of a-Si: H thin-film transistors (TFTs) with different channel lengths was studied under uniaxial compressive and tensile strain applied parallel to the TFT source-drain current path. The source-drain parasitic resistance and channel sheet conductance were extracted to explain the device performance under mechanical strain. These results indicate that the compressive bending leads to a significant decrease (similar to 16%) in the source-drain parasitic resistance. The channel sheet conductance has shown a 6% variation under mechanical bending. The variation under mechanical bending strain originates from the evolution of defect state density in a-Si:H channel material. (c) 2007 The Electrochemical Society.