標題: | Structural and electrical investigations of pulse-laser-deposited (Pb,Sr)TiO3 films at various oxygen partial pressures |
作者: | Wang, Jyh-Liang Lai, Yi-Sheng Liou, Sz-Chian Chou, Chen-Chia Tsai, Chun-Chien Juan, Chun-Ping Tseng, Huai-Yuan Jan, Chueh-Kuei Cheng, Huang-Chung 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 2007 |
摘要: | Pulsed-laser deposited (Pb,Sr)TiO3 (PSrT) films on Pt/SiO2/Si substrate deposited at various oxygen partial pressures (P-O2), ranging from 50 to 200 mTorr, were investigated in this work. PSrT films exhibit (100) preferred orientation at lower P-O2 and then transit to (110) preferred orientation above 100 mTorr. The paraelectricity/ferroelectricity transition and dielectric constant of PSrT films are associated with the preferred orientation and oxygen concentration at various P-O2. Furthermore, films deposited at higher P-O2 exhibit higher breakdown field and smaller leakage current density as a consequence of fewer oxygen vacancies. Except for the case of films deposited at 200 mTorr, the conduction mechanism is identified as Schottky emission/Poole-Frenkel emission at low/high electric fields. (c) 2007 The Electrochemical Society. |
URI: | http://hdl.handle.net/11536/11400 http://dx.doi.org/10.1149/1.2728148 |
ISSN: | 0013-4651 |
DOI: | 10.1149/1.2728148 |
期刊: | JOURNAL OF THE ELECTROCHEMICAL SOCIETY |
Volume: | 154 |
Issue: | 6 |
起始頁: | G141 |
結束頁: | G146 |
Appears in Collections: | Articles |
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