完整後設資料紀錄
DC 欄位語言
dc.contributor.authorLu, Ching-Senen_US
dc.contributor.authorHorng-Chih, Linen_US
dc.contributor.authorLee, Yao-Jenen_US
dc.date.accessioned2014-12-08T15:15:10Z-
dc.date.available2014-12-08T15:15:10Z-
dc.date.issued2007en_US
dc.identifier.issn0013-4651en_US
dc.identifier.urihttp://hdl.handle.net/11536/11402-
dc.identifier.urihttp://dx.doi.org/10.1149/1.2792186en_US
dc.description.abstractCharacteristics of p-channel SiN-capped metal-oxide-semiconductor field-effect transistors (PMOSFETs) with a thin HfO2 buffer layer were investigated. The compressive strain in the channel was deliberately induced in this study by a SiN capping layer over the gate using plasma-enhanced chemical vapor deposition (PECVD). Although a compressive SiN capping effectively boosts the drive current of PMOSFET devices, its presence also worsens the negative bias temperature instability (NBTI) characteristics due to the high hydrogen content in the SiN layer, which could diffuse into the channel region during the deposition process. To address this issue, the insertion of a 3 nm thick HfO2 buffer layer between the gate and SiN capping is proposed and demonstrated to improve NBTI reliability without sacrificing the device performance enhancement. (c) 2007 The Electrochemical Society.en_US
dc.language.isoen_USen_US
dc.titleImprovement of negative-bias-temperature instability in SiN-capped p-channel metal-oxide-semiconductor field-effect transistors using ultrathin HfO2 buffer layeren_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.2792186en_US
dc.identifier.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETYen_US
dc.citation.volume154en_US
dc.citation.issue12en_US
dc.citation.spageH1036en_US
dc.citation.epageH1040en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000250504600072-
dc.citation.woscount0-
顯示於類別:期刊論文


文件中的檔案:

  1. 000250504600072.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。