Sol-gel-derived double-layered nanocrystal memory

Abstract

The authors have used the sol-gel spin-coating method to fabricate a coexisting hafnium silicate and zirconium silicate double-layered nanocrystal (NC) memories. From transmission electron microscopic and x-ray photoelectron spectroscopic analyses, the authors determined that the hafnium silicate and zirconium silicate NCs formed after annealing at 900 degrees C for 1 min. When using channel hot electron injection for charging and band-to-band tunneling-induced hot hole injection for discharging, the NC memories exhibited superior V-th shifting because of the higher probability for trapping the charge carrier. (c) 2006 American Institute of Physics.