標題: | Characteristics of single-mode InGaAs submonolayer quantum-dot photonic-crystal vertical-cavity surface-emitting lasers |
作者: | Yang, Hung-Pin D. Hsu, I-Chen Lai, Fang-I Lin, Gray Hsiao, Ru-Shang Maleev, Nikolai A. Blokhin, Sergej A. Kuo, Hao-Chung Chi, Jim Y. 光電工程學系 Department of Photonics |
關鍵字: | single-mode;submonolayer;quantum-dot;VCSEL |
公開日期: | 1-十二月-2006 |
摘要: | An InGaAs submonolayer (SML) quantum-dot photonic-crystal vertical-cavity surface-emitting laser (QD PhC-VCSEL) for fiber-optic applications is demonstrated for the first time. The active region of the device contains three InGaAs SML QD layers. Each of the InGaAs SML QD layers is formed by alternate depositions of InAs (< 1 ML) and GaAs. A single-fundamental-mode CW output power of 3.8 mW at 28 mA has been achieved in the 990 nm range, with a threshold current of 0.9 mA. A side-mode suppression ratio (SMSR) larger than 35 dB has been demonstrated over the entire current operation range. The beam profile and near-field image study of the PhC-VCSEL indicates that the laser beam,is well confined by the photonic crystal structure of the device. |
URI: | http://dx.doi.org/10.1143/JJAP.45.9078 http://hdl.handle.net/11536/11471 |
ISSN: | 0021-4922 |
DOI: | 10.1143/JJAP.45.9078 |
期刊: | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS |
Volume: | 45 |
Issue: | 12 |
起始頁: | 9078 |
結束頁: | 9082 |
顯示於類別: | 期刊論文 |