標題: | Observation of compositional modulation in (111)A InGaAs quantum wells and the effect on optical properties |
作者: | Chin, A Chen, WJ 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 22-七月-1996 |
摘要: | We have studied the growth of InGaAs/GaAs multiple quantum wells (MQWs) on (111)A GaAs. Uniform thickness of (111)A quantum wells is observed by the cross-sectional transmission electron microscopy (TEM). Growth induced long-range In- and Ga-rich InxGa1-xAs/InyGa1-yAs superlattice in (111)A is also observed by cross-sectional TEM in the ternary InGaAs wells. In contrast, none of the above superstructure was observed by TEM on a side-by-side grown (100) oriented substrate. However, the photoluminescence (PL) linewidth is broadened by such compositional modulation. Low-temperature (15 K) photoluminescence showed a broad PL linewidth of 27.5 meV for In0.16Ga0.84As/GaAs MQWs grown on (111)A substrates at 520 degrees C. A decreased PL linewidth of 15.7 meV and a reduced compositional modulation in InGaAs wells can be achieved at a higher growth temperature of 560 degrees C. (C) 1996 American Institute of Physics. |
URI: | http://hdl.handle.net/11536/1157 |
ISSN: | 0003-6951 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 69 |
Issue: | 4 |
起始頁: | 443 |
結束頁: | 445 |
顯示於類別: | 期刊論文 |