標題: Investigation of programming charge distribution in nonoverlapped implantation nMOSFETs
作者: Jeng, Erik S.
Kuo, Pai-Chun
Hsieh, Chien-Sheng
Fan, Chen-Chia
Lin, Kun-Ming
Hsu, Hui-Chun
Chou, Wu-Ching
電子物理學系
Department of Electrophysics
關鍵字: channel hot electron injection (CHEI);charge-pumping;nonoverlapped implantation (NOI);nonvolatile memory (NVM)
公開日期: 1-Oct-2006
摘要: Novel gate-to-drain nonoverlapped-implantation (NOI) nMOSFETs have been developed as potential multibit-per-cell nonvolatile-memory (NVM) devices. The lateral charge distribution of the NOI NVM device programmed by channel hot electron injection is investigated by charge-pumping (CP) techniques with presumed interface trap distributions. For the first time, the CP results have revealed the lateral charge distribution and trapping density at the NOI's programmed state. The maximum trapping charge density locates near its drain junction. The charge distribution is estimated about 90 nm in length and spread widely over the NOI region. Two-dimensional simulators with charge bars using the same charge trapping distribution confirm the experimental results by fitting their I-DS - V-G curves.
URI: http://dx.doi.org/10.1109/TED.2006.882044
http://hdl.handle.net/11536/11702
ISSN: 0018-9383
DOI: 10.1109/TED.2006.882044
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 53
Issue: 10
起始頁: 2517
結束頁: 2524
Appears in Collections:Articles


Files in This Item:

  1. 000240926300014.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.