Transmission electron microscopy studies of GaAs nanostructures in InGaAs/InP matrix grown by molecular beam epitaxy

標題:	Transmission electron microscopy studies of GaAs nanostructures in InGaAs/InP matrix grown by molecular beam epitaxy
作者:	Lin, S. D. Lin, Z. C. Lee, C. P. 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
公開日期:	1-Sep-2006
摘要:	Self-assembled GaAs nanostructures in In0.53Ga0.47As matrix on (100) InP substrate have been investigated using atomic force microscopy (AFM) and cross-sectional transmission electron microscopy (XTEM). In measured AFM images, dotlike and wirelike GaAs nanostructures were obtained with different deposition thicknesses. The XTEM images clearly showed composition modulation in the overgrown InGaAs matrix. The reason for this composition modulation is explained by strain field compensation and surface energy minimization. (c) 2006 American Institute of Physics.
URI:	http://dx.doi.org/10.1063/1.2345031 http://hdl.handle.net/11536/11877
ISSN:	0021-8979
DOI:	10.1063/1.2345031
期刊:	JOURNAL OF APPLIED PHYSICS
Volume:	100
Issue:	5
結束頁:
Appears in Collections:	Articles

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