標題: | Thermal stability of Ti/Pt/Cu Schottky contact on InAlAs layer |
作者: | Lien, Yi-Chung Chang, Edward Yi Chen, Szu-Hung Chu, Li-Hsin Chen, Po-Chou Hsieh, Yen-Chang 材料科學與工程學系 Department of Materials Science and Engineering |
公開日期: | 21-Aug-2006 |
摘要: | Electrical characteristics and thermal stability of the Ti/Pt/Cu Schottky contact on InAlAs were investigated. The Ti/Pt/Cu Schottky contact had comparable electrical properties compared to the conventional Ti/Pt/Au contact after annealing. As judged from the material analysis, the Ti/Pt/Cu on InAlAs after 350 degrees C annealing showed no diffusion sign into the InAlAs. After 400 degrees C annealing, the interfacial mixing of Cu and the underlying layers occurred and resulted in the formation of Cu4Ti. The results show that Ti/Pt/Cu Schottky contact using platinum as the diffusion barrier is very stable up to 350 degrees C annealing and can be used for InAlAs/InGaAs high-electron mobility transistors and monolithic microwave integrated circuits. (c) 2006 American Institute of Physics. |
URI: | http://dx.doi.org/10.1063/1.2338567 http://hdl.handle.net/11536/11906 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.2338567 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 89 |
Issue: | 8 |
結束頁: | |
Appears in Collections: | Articles |
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