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dc.contributor.authorLiang, S. W.en_US
dc.contributor.authorChang, Y. W.en_US
dc.contributor.authorChen, Chihen_US
dc.contributor.authorLiu, Y. C.en_US
dc.contributor.authorChen, K. H.en_US
dc.contributor.authorLin, S. H.en_US
dc.date.accessioned2014-12-08T15:16:08Z-
dc.date.available2014-12-08T15:16:08Z-
dc.date.issued2006-08-01en_US
dc.identifier.issn0361-5235en_US
dc.identifier.urihttp://hdl.handle.net/11536/11960-
dc.description.abstractThe bump resistance of flip-chip solder joints was measured experimentally and analyzed by the finite-element method. Kelvin structures for flip-chip solder joints were designed and fabricated to measure the bump resistance. The measured value was only about 0.9 m Omega at room temperature, which was much lower than that expected. Three-dimensional (3-D) modeling was performed to examine the current and voltage distribution in the joint. The simulated value was 7.7 m Omega, which was about 9 times larger than the experimental value. The current crowding effect was found to be responsible for the difference in bump resistance. Therefore, the measured bump resistance strongly depended on the layout of the Kelvin structure. Various layouts were simulated to investigate the geometrical effect of bump resistance, and a significant geometrical effect was found. A proper layout was proposed to measure the bump resistance correctly. The Kelvin structure would play an important role in monitoring void formation and microstructure changes during the electromigration of flip-chip solder joints.en_US
dc.language.isoen_USen_US
dc.subjectelectromigrationen_US
dc.subjectsolderen_US
dc.subjectbump resistanceen_US
dc.subjectflip chipen_US
dc.titleGeometrical effect of bump resistance for flip-clip solder joints: Finite-element modeling and experimental resultsen_US
dc.typeArticleen_US
dc.identifier.journalJOURNAL OF ELECTRONIC MATERIALSen_US
dc.citation.volume35en_US
dc.citation.issue8en_US
dc.citation.spage1647en_US
dc.citation.epage1654en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000240072400008-
dc.citation.woscount9-
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