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dc.contributor.authorHsu, Chin-Yuanen_US
dc.contributor.authorLan, Wen-Howen_US
dc.contributor.authorWu, YewChung Sermonen_US
dc.date.accessioned2014-12-08T15:16:09Z-
dc.date.available2014-12-08T15:16:09Z-
dc.date.issued2006-08-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.45.6256en_US
dc.identifier.urihttp://hdl.handle.net/11536/11990-
dc.description.abstractThe effects of thermal annealing between Ni film and a p-type GaN layer have been investigated. The electrical and optical properties were measured by Hall effect, capacitance-voltage (C-V) and photoluminescence (PL) measurements. The samples activated with Ni film obtained higher effective carrier concentrations than those activated without Ni film. Effective carrier concentrations of 5 x 10(15) and 1 x 10(17) cm(-3) We're achieved at an activating temperature of 400 degrees C without and with Ni film. The Ni film may act as a catalyst for the activation of Mg-doped GaN at a temperature less than 500 degrees C. At a temperature higher than 600 degrees C, the Ni film may react with the Mg-doped GaN. X-ray diffraction (XRD) analyses indicated that Ni film on Mg-doped GaN transforms to nickel oxide (NiO) and nickel nitride (Ni3N) during thermal annealing in air. The peaks of the PL spectra at 15 K of the samples activated at 600 degrees C with and without Ni film were observed at approximately 3.2 and 2.9 eV. We suggest that Ni atoms not only enhance hydrogen desorption but also diffuse into the Mg-doped GaN layers to form Ni-compound materials. At a high annealing temperature, impurities such as Ni nitride, nitrogen vacancies or other defects may reduce the carrier mobility and provide an increase in the effective carrier concentrations in the surface region.en_US
dc.language.isoen_USen_US
dc.subjectMg-doped GaNen_US
dc.subjectactivationen_US
dc.subjecteffective carrier concentrationen_US
dc.subjectimpuritiesen_US
dc.titleThermal annealing effect between Ni film and Mg-doped GaN layeren_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.45.6256en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERSen_US
dc.citation.volume45en_US
dc.citation.issue8Aen_US
dc.citation.spage6256en_US
dc.citation.epage6258en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000240512800038-
dc.citation.woscount2-
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