標題: Defect states investigation in poly(2-methoxy,5-(2 ' ethyl-hexyloxy)-1,4-phenylene vinylene) (MEH-PPV)
作者: Nguyen, T. P.
Le Rendu, P.
Gaudin, O.
Lee, A. J. T.
Jackman, R. B.
Huang, C. H.
應用化學系
Department of Applied Chemistry
關鍵字: traps;MEH-PPV;DLTS
公開日期: 26-Jul-2006
摘要: in this study, application of the charge based Deep Level Transient Spectroscopy (Q-DLTS) has been extended to poly(2-methoxy,5-(2ethylhexyloxy)-1,4-phenylene vinylene) (MEH-PPV) single layer diodes, whose cathode consisted of aluminium and anode of indium tin oxide (ITO). The results reveal a broad Q-DLTS spectrum, with at least two maxima, consistent with a complex distribution of trap states. Only the Q-DLTS maximum with the shortest relaxation time could be fully resolved over the temperature range used here (100-300 K), yielding activation energies and capture cross sections in the ranges 0.3-0.4 eV and 10(-20) 10(-18) cm(2), respectively. It will be shown that this energy level is likely related to a majority-carrier (hole) trap, consistent with a Poole-Frenkel injection mechanism and p-type doping of the MEH-PPV film. The origin of the second (non-resolved) Q-DLTS peak will also be discussed. (c) 2005 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.tsf.2005.12.033
http://hdl.handle.net/11536/12007
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2005.12.033
期刊: THIN SOLID FILMS
Volume: 511
Issue: 
起始頁: 338
結束頁: 341
Appears in Collections:Conferences Paper


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