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dc.contributor.authorChang, Y. W.en_US
dc.contributor.authorLiang, S. W.en_US
dc.contributor.authorChen, Chihen_US
dc.date.accessioned2014-12-08T15:16:11Z-
dc.date.available2014-12-08T15:16:11Z-
dc.date.issued2006-07-17en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2226989en_US
dc.identifier.urihttp://hdl.handle.net/11536/12020-
dc.description.abstractKelvin bump probes were fabricated in flip-chip solder joints, and they were employed to monitor the void formation during electromigration. We found that voids started to form at approximately 5% of the failure time under 0.8 A at 150 degrees C, and the bump resistance increased only 0.02 m Omega in the initial stage of void formation. Three-dimensional simulation was performed to examine the increase in bump resistance at different stages of void formation, and it fitted the experimental results quite well. This technique provides a systematic way for investigating the void formation during electromigration. (c) 2006 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleStudy of void formation due to electromigration in flip-chip solder joints using Kelvin bump probesen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.2226989en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume89en_US
dc.citation.issue3en_US
dc.citation.epageen_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000239174100054-
dc.citation.woscount35-
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