| 標題: | High-peak-power AlGaInAs quantum-well 1.3-mu m laser pumped by a diode-pumped actively Q-switched solid-state laser |
| 作者: | Su, KW Huang, SC Li, A Liu, SC Chen, YF Huang, KF 電子物理學系 Department of Electrophysics |
| 公開日期: | 1-Jul-2006 |
| 摘要: | We report a room-temperature high-peak-power AlGaInAs 1.36 mu m TEMOO laser pumped by a diode-pumped actively Q-switched Nd:YAG 1.06 mu m laser. With an average pump power of 1.0 W, an average output power of 140 mW was obtained at a pulse repetition rate of 10 kHz. With a peak pump power of 8.3 kW, the highest peak output power was 1.5 kW at a pulse repetition rate of 5 kHz. (c) 2006 Optical Society of America. |
| URI: | http://dx.doi.org/10.1364/OL.31.002009 http://hdl.handle.net/11536/12072 |
| ISSN: | 0146-9592 |
| DOI: | 10.1364/OL.31.002009 |
| 期刊: | OPTICS LETTERS |
| Volume: | 31 |
| Issue: | 13 |
| 起始頁: | 2009 |
| 結束頁: | 2011 |
| Appears in Collections: | Articles |
- AlGaInAs quantum-well 1.3-mu m laser by a diode-pumped actively Q-switched Nd : GdVO4 laser - art. no. 68712K / Huang, S. C.;Su, K. W.;Li, A.;Liu, S. C.;Chen, Y. F.
- AlGaInAs quantum-well as a saturable absorber in a diode-pumped passively Q-switched solid-state laser / Huang, S. C.;Liu, S. C.;Li, A.;Su, K. W.;Chen, Y. F.
- Semiconductor quantum-well saturable absorbers for efficient passive Q switching of a diode-pumped 946 nm Nd : YAG laser / Huang, Y. P.;Liang, H. C.;Huang, J. Y.;Su, K. W.;Li, A.
- Low-temperature study of lasing characteristics for 1.3-mu m AlGaInAs quantum-well laser pumped by an actively Q-switched Nd:YAG laser / Su, K. W.;Chen, Yi-Fan;Huang, S. C.;Li, A.;Liu, S. C.
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