Characterization of the low temperature activated P+/N junction formed by implant into silicide method

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chang, Kow-Ming	en_US
dc.contributor.author	Lin, Jian-Hong	en_US
dc.contributor.author	Yang, Chih-Hsiang	en_US
dc.date.accessioned	2014-12-08T15:16:18Z	-
dc.date.available	2014-12-08T15:16:18Z	-
dc.date.issued	2007	en_US
dc.identifier.isbn	978-1-4244-1891-6	en_US
dc.identifier.uri	http://hdl.handle.net/11536/12078	-
dc.language.iso	en_US	en_US
dc.title	Characterization of the low temperature activated P+/N junction formed by implant into silicide method	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2007 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, VOLS 1 AND 2	en_US
dc.citation.spage	640	en_US
dc.citation.epage	641	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000255857100330	-
顯示於類別：	會議論文