標題: | Characterization of the low temperature activated N(+)/P junction formed by implant into silicide method |
作者: | Chang, Kow-Ming Lin, Jian-Hong Yang, Chih-Hsiang 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | nickel silicide;implant into silicide;solid phase epitaxial regrowth;rapid thermal anneal |
公開日期: | 30-七月-2008 |
摘要: | Shallow junction formation and low thermal budget control are important for advanced device manufacturing. Implant into silicide (IIS) method is a candidate to achieve both requirements. In this work we show that the high activation ability of the implant into nickel silicide method at low activated temperature is strongly related to the solid phase epitaxial regrowth (SPER) process. The SIMS, capacitance-voltage (C-V), four points probe (FPP), and current-voltage (I-V) measurements are combined to demonstrate that the SPER process of the IIS method is starting from the silicide/silicon (M/S) interface. The best N(+)/P interface is formed when SPER is complete. After SPER process finished, additional thermal budget may cause junction performance degradation at the temperature higher than 550 degrees C. (C) 2008 Elsevier B. V. All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.apsusc.2008.02.137 http://hdl.handle.net/11536/29176 |
ISSN: | 0169-4332 |
DOI: | 10.1016/j.apsusc.2008.02.137 |
期刊: | APPLIED SURFACE SCIENCE |
Volume: | 254 |
Issue: | 19 |
起始頁: | 6155 |
結束頁: | 6157 |
顯示於類別: | 會議論文 |