標題: Characterization of the low temperature activated N(+)/P junction formed by implant into silicide method
作者: Chang, Kow-Ming
Lin, Jian-Hong
Yang, Chih-Hsiang
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: nickel silicide;implant into silicide;solid phase epitaxial regrowth;rapid thermal anneal
公開日期: 30-Jul-2008
摘要: Shallow junction formation and low thermal budget control are important for advanced device manufacturing. Implant into silicide (IIS) method is a candidate to achieve both requirements. In this work we show that the high activation ability of the implant into nickel silicide method at low activated temperature is strongly related to the solid phase epitaxial regrowth (SPER) process. The SIMS, capacitance-voltage (C-V), four points probe (FPP), and current-voltage (I-V) measurements are combined to demonstrate that the SPER process of the IIS method is starting from the silicide/silicon (M/S) interface. The best N(+)/P interface is formed when SPER is complete. After SPER process finished, additional thermal budget may cause junction performance degradation at the temperature higher than 550 degrees C. (C) 2008 Elsevier B. V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.apsusc.2008.02.137
http://hdl.handle.net/11536/29176
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2008.02.137
期刊: APPLIED SURFACE SCIENCE
Volume: 254
Issue: 19
起始頁: 6155
結束頁: 6157
Appears in Collections:Conferences Paper


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