CMOS dual-wideband low-noise amplifier in 3.1GHz-4.9GHz and 6.0GHz-10.3GHz for ultra-wideband wireless receiver

Abstract

In this paper a CMOS dual-wideband low-noise amplifier (LNA) is designed for ultra-wideband (UWB) wireless receiver radio system. The design consists of a wideband input impedance matching network, two stage cascode amplifiers with shunt-peaked load, a notch filter and an output buffer for measurement purpose. It is simulated in TSMC 0.18um standard RF CMOS process. The LNA gives 13.66dB maximum power gain between 3.0GHz-4.9GHz and 10.34dB maximum power gain between 6.0GHz-10.3GHz while consuming 24.07mW through a 1.8V supply. Over the 3.1GHz-4.9GHz frequency band and the 6.0GHz-10.3GHz, a minimum noise figure is 2.6dB and 3.8dB. Input return loss lower than - 8.31dB in all bandwidth have been achieved.