标题: | Nitride-based LEDs with nano-scale textured sidewalls using natural lithography |
作者: | Huang, HW Kuo, HC Chu, JT Lai, CF Kao, CC Lu, TC Wang, SC Tsai, RJ Yu, CC Lin, CF 光电工程学系 Department of Photonics |
公开日期: | 28-六月-2006 |
摘要: | This investigation describes the development of a InGaN/GaN light-emitting diode (LED) with textured sidewalls using natural lithography with polystyrene spheres (PSs) as the etching mask and dry etching the epitaxial layers of LEDs to achieve nano-scale textured sidewalls. The LED with textured sidewalls increased the output power of the InGaN - GaN multiple quantum well (MQW) LEDs by a factor of 1.3, indicating that the LED with nano-scale textured sidewalls had larger light extraction efficiency. The wall-plug efficiency of nitride-based LEDs was increased by 30% using textured sidewalls. |
URI: | http://dx.doi.org/10.1088/0957-4484/17/12/030 http://hdl.handle.net/11536/12124 |
ISSN: | 0957-4484 |
DOI: | 10.1088/0957-4484/17/12/030 |
期刊: | NANOTECHNOLOGY |
Volume: | 17 |
Issue: | 12 |
起始页: | 2998 |
结束页: | 3001 |
显示于类别: | Articles |
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