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dc.contributor.authorLiao, YSen_US
dc.contributor.authorShi, JWen_US
dc.contributor.authorWu, YSen_US
dc.contributor.authorKuo, HCen_US
dc.contributor.authorFeng, Men_US
dc.contributor.authorLin, GRen_US
dc.date.accessioned2014-12-08T15:16:24Z-
dc.date.available2014-12-08T15:16:24Z-
dc.date.issued2006-06-12en_US
dc.identifier.issn1094-4087en_US
dc.identifier.urihttp://dx.doi.org/10.1364/OE.14.005031en_US
dc.identifier.urihttp://hdl.handle.net/11536/12153-
dc.description.abstractWe demonstrate the optical heterodyne diagnostics and high saturation power characteristics of a novel undoped InP sandwiched In0.53Ga0.47As p-i-n photodiode with a partially p-doped photoabsorption layer, which is grown on a linearly graded metamorphic InxGa1-xP buffered GaAs substrate layer and exhibits an excellent low dark current density of 3.6 x 10(-7) A/cm(2). Such a top-illuminated optical receiver exhibits an illuminating window of 60-mu m diameter, which performs ultra-linear power handling capability up to 18 dBm at 1550 nm, providing a maximum photocurrent of 35 mA under a reverse bias of 9 volts. These result in extremely high current bandwidth and bandwidth-responsivity products of 350 mA center dot GHz and 4.8 GHz center dot A/W, respectively, at receiving frequency of up to 10 GHz. (c) 2006 Optical Society of America.en_US
dc.language.isoen_USen_US
dc.titleOptically heterodyne diagnosis of a high-saturation-power undoped InP sandwiched InGaAs p-i-n photodiode grown on GaAsen_US
dc.typeArticleen_US
dc.identifier.doi10.1364/OE.14.005031en_US
dc.identifier.journalOPTICS EXPRESSen_US
dc.citation.volume14en_US
dc.citation.issue12en_US
dc.citation.spage5031en_US
dc.citation.epage5037en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000238437800010-
dc.citation.woscount0-
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