High-linear-power MESFET devices using source-degeneration inductance and input-impedance mismatch

doi:10.1002/mop.21530

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DC 欄位	值	語言
dc.contributor.author	Meng, CC	en_US
dc.contributor.author	Wang, W	en_US
dc.date.accessioned	2014-12-08T15:16:39Z	-
dc.date.available	2014-12-08T15:16:39Z	-
dc.date.issued	2006-05-01	en_US
dc.identifier.issn	0895-2477	en_US
dc.identifier.uri	http://dx.doi.org/10.1002/mop.21530	en_US
dc.identifier.uri	http://hdl.handle.net/11536/12284	-
dc.description.abstract	Linearity can be improved drastically by sacrificing power gain with the same output power. GaAs MESFET devices with via-hole ground and with bond-wire ground are used to investigate the effect of source-inductive feedback and input-impedance mismatch on the effect of linearm. At 2.4 GHz the device without bond-wire ground and mismatched input impedance has the highest linearity OIP3 = 50 dBm, gain = 13.5 dB gain, and P-tdB = 29 dBm, while the device with via-hole ground and inatched input impedance has the lowest linearity OIP3 = 40 dBm, 18.3 dB gain, and P-tdB = 29 dBm. (c) 2006 Wiley Periodicals, Inc.	en_US
dc.language.iso	en_US	en_US
dc.subject	power amplifier	en_US
dc.subject	MESFET	en_US
dc.subject	linearity	en_US
dc.subject	GaAs	en_US
dc.subject	intermodulation	en_US
dc.title	High-linear-power MESFET devices using source-degeneration inductance and input-impedance mismatch	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1002/mop.21530	en_US
dc.identifier.journal	MICROWAVE AND OPTICAL TECHNOLOGY LETTERS	en_US
dc.citation.volume	48	en_US
dc.citation.issue	5	en_US
dc.citation.spage	953	en_US
dc.citation.epage	954	en_US
dc.contributor.department	電信工程研究所	zh_TW
dc.contributor.department	Institute of Communications Engineering	en_US
dc.identifier.wosnumber	WOS:000236809800042	-
dc.citation.woscount	0	-
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