標題: | 10-Gb/s modulator drivers with local feedback networks |
作者: | Li, DU Tsai, CM 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | intrinsic collector-base capacitance;intrinsic drain-gate capacitance;laser drivers;modulator drivers;silicon-based;10 Gb/s |
公開日期: | 1-五月-2006 |
摘要: | A novel intrinsic collector-base capacitance (C(CB)) feedback network (ICBCFN) was incorporated into the conventional cascode and series-connected voltage balancing (SCVB) circuit configurations to implement 10-Gb/s modulator drivers. The drivers fabricated in 0.35-mu m SiGe BiCMOS process could generate 9 V(PP) differential output swings with rise/fall time of less than 29 ps. Also, the ICBCFN was modified as an intrinsic drain-gate capacitance feedback network (IDGCFN) to implement drivers with differential output swing of 8 V(PP) in 0.18-mu m CMOS process. The power consumption is as low as 0.6 W. The present work shows that the driving capability is greater than that of the currently reported Silicon-based drivers. |
URI: | http://dx.doi.org/10.1109/JSSC.2006.872878 http://hdl.handle.net/11536/12292 |
ISSN: | 0018-9200 |
DOI: | 10.1109/JSSC.2006.872878 |
期刊: | IEEE JOURNAL OF SOLID-STATE CIRCUITS |
Volume: | 41 |
Issue: | 5 |
起始頁: | 1025 |
結束頁: | 1030 |
顯示於類別: | 期刊論文 |