標題: 10-Gb/s modulator drivers with local feedback networks
作者: Li, DU
Tsai, CM
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: intrinsic collector-base capacitance;intrinsic drain-gate capacitance;laser drivers;modulator drivers;silicon-based;10 Gb/s
公開日期: 1-May-2006
摘要: A novel intrinsic collector-base capacitance (C(CB)) feedback network (ICBCFN) was incorporated into the conventional cascode and series-connected voltage balancing (SCVB) circuit configurations to implement 10-Gb/s modulator drivers. The drivers fabricated in 0.35-mu m SiGe BiCMOS process could generate 9 V(PP) differential output swings with rise/fall time of less than 29 ps. Also, the ICBCFN was modified as an intrinsic drain-gate capacitance feedback network (IDGCFN) to implement drivers with differential output swing of 8 V(PP) in 0.18-mu m CMOS process. The power consumption is as low as 0.6 W. The present work shows that the driving capability is greater than that of the currently reported Silicon-based drivers.
URI: http://dx.doi.org/10.1109/JSSC.2006.872878
http://hdl.handle.net/11536/12292
ISSN: 0018-9200
DOI: 10.1109/JSSC.2006.872878
期刊: IEEE JOURNAL OF SOLID-STATE CIRCUITS
Volume: 41
Issue: 5
起始頁: 1025
結束頁: 1030
Appears in Collections:Articles


Files in This Item:

  1. 000237210500003.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.