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dc.contributor.author莊景德en_US
dc.contributor.author楊皓義en_US
dc.contributor.author夏茂墀en_US
dc.contributor.author黃威en_US
dc.contributor.author陳家政en_US
dc.contributor.author石維強en_US
dc.date.accessioned2015-05-12T02:59:59Z-
dc.date.available2015-05-12T02:59:59Z-
dc.date.issued2015-01-21en_US
dc.identifier.govdocG11C007/10zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/122923-
dc.description.abstract一靜態隨機存取記憶體,包含:至少一記憶格電路,包含了具有至少二反相器的一閉鎖電路,且包含用以接收電能的兩電能接收端;以及一電能供應電路,用以提供該電能至該記憶格電路,使得當資料被寫入至該閉鎖電路時,該閉鎖電路的供應電壓低於一預定電壓。zh_TW
dc.language.isozh_TWen_US
dc.title低電能靜態隨機存取記憶體zh_TW
dc.typePatentsen_US
dc.citation.patentcountryTWNzh_TW
dc.citation.patentnumberI470640zh_TW
Appears in Collections:Patents


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