完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Wu, WH | en_US |
dc.contributor.author | Tsui, BY | en_US |
dc.contributor.author | Huang, YP | en_US |
dc.contributor.author | Hsieh, FC | en_US |
dc.contributor.author | Chen, MC | en_US |
dc.contributor.author | Hou, YT | en_US |
dc.contributor.author | Jin, Y | en_US |
dc.contributor.author | Tao, HJ | en_US |
dc.contributor.author | Chen, SC | en_US |
dc.contributor.author | Liang, MS | en_US |
dc.date.accessioned | 2014-12-08T15:16:41Z | - |
dc.date.available | 2014-12-08T15:16:41Z | - |
dc.date.issued | 2006-05-01 | en_US |
dc.identifier.issn | 0741-3106 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/LED.2006.873423 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/12306 | - |
dc.description.abstract | A new circuit model of -five elements has been proposed for the two-frequency capacitance-voltage (C-V) correction of high-k gate dielectric and ultrathin oxide. This five-element circuit model considered the static and dynamic dielectric losses in a lossy MOS capacitor, the parasitic well/substrate resistance, and the series inductance in the cables and probing system. Each of the circuit elements could be easily extracted from the two-frequency C-V and static current-voltage (I-V) measurements if some criteria are well satisfied. In addition, this model can also be transformed into another two four-element circuit models to simplify the analysis and calculations, depending on the gate ea age current. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | high-k dielectric | en_US |
dc.subject | MOS capacitor | en_US |
dc.subject | two-frequency capacitance-voltage (C-V) correction | en_US |
dc.subject | ultrathin oxide | en_US |
dc.title | Two-frequency C-V correction using five-element circuit model for high-k gate dielectric and ultrathin oxide | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/LED.2006.873423 | en_US |
dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
dc.citation.volume | 27 | en_US |
dc.citation.issue | 5 | en_US |
dc.citation.spage | 399 | en_US |
dc.citation.epage | 401 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000237602300029 | - |
dc.citation.woscount | 13 | - |
顯示於類別: | 期刊論文 |