Full metadata record
DC FieldValueLanguage
dc.contributor.authorLin, YHen_US
dc.contributor.authorChien, CHen_US
dc.contributor.authorChang, CYen_US
dc.contributor.authorLei, TFen_US
dc.date.accessioned2014-12-08T15:16:41Z-
dc.date.available2014-12-08T15:16:41Z-
dc.date.issued2006-05-01en_US
dc.identifier.issn0734-2101en_US
dc.identifier.urihttp://dx.doi.org/10.1116/1.2174021en_US
dc.identifier.urihttp://hdl.handle.net/11536/12307-
dc.description.abstractIn this article, we demonstrate the effect of the postdeposition annealing for the HfO2 trapping layer on the performance of the Si-oxide-nitride-oxide-silicon-type flash memories. It was found that the memory window becomes larger while the retention and endurance characteristics get worse as the annealing temperature increases. This was ascribed to the larger amount and the shallower energy levels of the crystallization-induced traps as compared to the traps presented in the as-fabricated HfO2 film. Finally, in the aspect of disturbances, we show only insignificant read, drain, and gate disturbances presented in the three samples in the normal operation. (c) 2006 American Vacuum Society.en_US
dc.language.isoen_USen_US
dc.titleAnnealing temperature effect on the performance of nonvolatile HfO2Si-oxide-nitride-oxide-silicon-type flash memoryen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1116/1.2174021en_US
dc.identifier.journalJOURNAL OF VACUUM SCIENCE & TECHNOLOGY Aen_US
dc.citation.volume24en_US
dc.citation.issue3en_US
dc.citation.spage682en_US
dc.citation.epage685en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000238091300047-
Appears in Collections:Conferences Paper


Files in This Item:

  1. 000238091300047.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.