完整後設資料紀錄
DC 欄位語言
dc.contributor.authorChang, LKen_US
dc.contributor.authorHu, CHen_US
dc.date.accessioned2014-12-08T15:16:42Z-
dc.date.available2014-12-08T15:16:42Z-
dc.date.issued2006-05-01en_US
dc.identifier.issn0885-8993en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TPEL.2006.874795en_US
dc.identifier.urihttp://hdl.handle.net/11536/12315-
dc.description.abstractNovel MOS charge pumps utilizing an exponential-gain structure and pumping gain increase (PGI) circuits with high voltage transfer efficiency to generate boosted output voltages are described. By using the PGI circuits, the threshold voltage problem of the MOSFET used as a switch is solved, and the limitation of the diode-configured output stage is removed. Thus, the boosted output voltage increases linearly as compared to the pumping stage number. An exponential-gain structure is also presented as a further application of the PGI circuit. By using this structure, fewer voltage pump stages are needed to obtain the required output voltage. For 1.5-V supply voltage operation, a four-time series (1.5 V-to-6 V) is demonstrated using the new techniques. Simulation and experimental results have shown that this design has good efficiency with a low-input supply voltage such as a one battery cell.en_US
dc.language.isoen_USen_US
dc.subjectcharge pumpen_US
dc.subjectdc/dc converteren_US
dc.subjecthigh-voltage generatoren_US
dc.subjectvoltage multiplieren_US
dc.titleHigh efficiency MOS charge pumps based on exponential-gain structure with pumping gain increase circuitsen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1109/TPEL.2006.874795en_US
dc.identifier.journalIEEE TRANSACTIONS ON POWER ELECTRONICSen_US
dc.citation.volume21en_US
dc.citation.issue3en_US
dc.citation.spage826en_US
dc.citation.epage831en_US
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.identifier.wosnumberWOS:000237477600031-
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