完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Lu, Ching-Sen | en_US |
dc.contributor.author | Lin, Horng-Chih | en_US |
dc.contributor.author | Chen, Ying-Hung | en_US |
dc.contributor.author | Huang, Tiao-Yuan | en_US |
dc.date.accessioned | 2014-12-08T15:16:49Z | - |
dc.date.available | 2014-12-08T15:16:49Z | - |
dc.date.issued | 2007 | en_US |
dc.identifier.isbn | 978-1-4244-0584-8 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/12368 | - |
dc.description.abstract | Although a compressive SiN capping could effectively boost the drive current of PMOS devices, it may concomitantly worsen the NBTI characteristics owing to the high hydrogen content in the SiN layer which might diffuse to the channel region during processing. To address this issue, inserting a thin 3nm HfO2 buffer layer between the gate and SiN capping is proposed and demonstrated to improve NBTI reliability without sacrificing the performance enhancement by SiN capping. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Improved NBTI in SiN-capped PMOSFETs with ultra-thin HfO2 buffer | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | 2007 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Proceedings of Technical Papers | en_US |
dc.citation.spage | 54 | en_US |
dc.citation.epage | 55 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000247059300025 | - |
顯示於類別: | 會議論文 |