標題: Improvement of negative-bias-temperature instability in SiN-capped p-channel metal-oxide-semiconductor field-effect transistors using ultrathin HfO2 buffer layer
作者: Lu, Ching-Sen
Horng-Chih, Lin
Lee, Yao-Jen
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2007
摘要: Characteristics of p-channel SiN-capped metal-oxide-semiconductor field-effect transistors (PMOSFETs) with a thin HfO2 buffer layer were investigated. The compressive strain in the channel was deliberately induced in this study by a SiN capping layer over the gate using plasma-enhanced chemical vapor deposition (PECVD). Although a compressive SiN capping effectively boosts the drive current of PMOSFET devices, its presence also worsens the negative bias temperature instability (NBTI) characteristics due to the high hydrogen content in the SiN layer, which could diffuse into the channel region during the deposition process. To address this issue, the insertion of a 3 nm thick HfO2 buffer layer between the gate and SiN capping is proposed and demonstrated to improve NBTI reliability without sacrificing the device performance enhancement. (c) 2007 The Electrochemical Society.
URI: http://hdl.handle.net/11536/11402
http://dx.doi.org/10.1149/1.2792186
ISSN: 0013-4651
DOI: 10.1149/1.2792186
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 154
Issue: 12
起始頁: H1036
結束頁: H1040
顯示於類別:期刊論文


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