Low-Voltage InGaZnO Thin Film Transistors with Small Sub-Threshold Swing

doi:10.1166/jnn.2015.9066

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Cheng, C. H.	en_US
dc.contributor.author	Chou, K. I.	en_US
dc.contributor.author	Hsu, H. H.	en_US
dc.date.accessioned	2015-07-21T08:29:37Z	-
dc.date.available	2015-07-21T08:29:37Z	-
dc.date.issued	2015-02-01	en_US
dc.identifier.issn	1533-4880	en_US
dc.identifier.uri	http://dx.doi.org/10.1166/jnn.2015.9066	en_US
dc.identifier.uri	http://hdl.handle.net/11536/123849	-
dc.description.abstract	We demonstrate a low-voltage driven, indium gallium zinc oxide thin-film transistor using high-kappa LaAlO3 gate dielectric. A low V-T of 0.42 V, very small sub-threshold swing of 68 mV/dec, field-effect mobility of 4.1 cm(2)Ns and low operation voltage of 1.4 V were reached simultaneously in LaAlO3/IGZO TFT device. This low-power and small SS TFT has the potential for fast switching speed and low power applications.	en_US
dc.language.iso	en_US	en_US
dc.subject	InGaZnO	en_US
dc.subject	Thin Film Transistor	en_US
dc.subject	LaAlO3	en_US
dc.subject	Sub-Threshold Swing	en_US
dc.title	Low-Voltage InGaZnO Thin Film Transistors with Small Sub-Threshold Swing	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1166/jnn.2015.9066	en_US
dc.identifier.journal	JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY	en_US
dc.citation.volume	15	en_US
dc.citation.spage	1486	en_US
dc.citation.epage	1489	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000345054100080	en_US
dc.citation.woscount	0	en_US
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