完整後設資料紀錄
DC 欄位語言
dc.contributor.authorTasi, Cheng-Hsunen_US
dc.contributor.authorTseng, Yu-Chinen_US
dc.contributor.authorJian, Sheng-Ruien_US
dc.contributor.authorLiao, Ying-Yenen_US
dc.contributor.authorLin, Chih-Mingen_US
dc.contributor.authorYang, Ping-Fengen_US
dc.contributor.authorChen, Dao-Longen_US
dc.contributor.authorChen, Hsueh-Juen_US
dc.contributor.authorLuo, Chih-Weien_US
dc.contributor.authorJuang, Jenh-Yihen_US
dc.date.accessioned2015-07-21T08:29:39Z-
dc.date.available2015-07-21T08:29:39Z-
dc.date.issued2015-01-15en_US
dc.identifier.issn0925-8388en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.jallcom.2014.09.028en_US
dc.identifier.urihttp://hdl.handle.net/11536/123851-
dc.description.abstractIn this study, the microstructural, morphological and nanomechanical properties of Bi2Te3 thin films are investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and nanoindentation techniques. The Bi2Te3 thin films were deposited on c-plane sapphire substrates using pulsed laser deposition (PLD) under the various helium gas pressures. The XRD results indicated that the Bi2Te3 thin films are textured with the c-axis preferentially oriented normal to the films surface. Both the grain size and surface roughness of the Bi2Te3 thin films exhibit an increasing trend with increasing the helium gas pressure. Furthermore, the hardness and Young\'s modulus of the Bi2Te3 thin films are measured by a Berkovich nanoindenter operated with the continuous contact stiffness measurements (CSM) mode were found to range from 2.92 +/- 0.12 to 4.02 +/- 0.14 GPa and from 106.31 +/- 0.63 to 127.46 +/- 9.21 GPa, respectively, when the helium gas pressure was increased from 2 x 10(-5) to 2 x 10(-3) Torr. (C) 2014 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectBi2Te3 thin filmsen_US
dc.subjectPLDen_US
dc.subjectXRDen_US
dc.subjectAFMen_US
dc.subjectNanoindentationen_US
dc.subjectHardnessen_US
dc.titleNanomechanical properties of Bi2Te3 thin films by nanoindentationen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.jallcom.2014.09.028en_US
dc.identifier.journalJOURNAL OF ALLOYS AND COMPOUNDSen_US
dc.citation.volume619en_US
dc.citation.spage834en_US
dc.citation.epage838en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000344429000121en_US
dc.citation.woscount1en_US
顯示於類別:期刊論文