標題: | Characteristics of ultraviolet nonpolar InGaN/GaN light-emitting diodes using trench epitaxial lateral overgrowth technology |
作者: | Ling, Shih-Chun Wang, Te-Chung Ko, Tsung-Shine Lu, Tien-Chang Kuo, Hao-Chung Wang, Shing-Chung 光電工程學系 Department of Photonics |
公開日期: | 2007 |
摘要: | Ultraviolet nonpolar InGaN/GaN light-emitting diodes were grown on trench epitaxial lateral overgrowth (TELOG) a-plane GaN template by metalorganic chemical vapor deposition. Electroluminescence measurements revealed main peak at 373 nm when injection current was 40 mA. Furthermore, cathodeluminescence observed the low-defect density wings emitted 373 run peak and the TELOG coalescence areas emitted 443 nm due to different incorporation of indium, Meanwhile, polarization measurement shown a degree of ultraviolet peak is 28.7%. |
URI: | http://hdl.handle.net/11536/12401 |
ISBN: | 978-1-4244-1173-3 |
期刊: | 2007 PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS, VOLS 1-4 |
起始頁: | 1276 |
結束頁: | 1277 |
顯示於類別: | 會議論文 |