標題: Characteristics of ultraviolet nonpolar InGaN/GaN light-emitting diodes using trench epitaxial lateral overgrowth technology
作者: Ling, Shih-Chun
Wang, Te-Chung
Ko, Tsung-Shine
Lu, Tien-Chang
Kuo, Hao-Chung
Wang, Shing-Chung
光電工程學系
Department of Photonics
公開日期: 2007
摘要: Ultraviolet nonpolar InGaN/GaN light-emitting diodes were grown on trench epitaxial lateral overgrowth (TELOG) a-plane GaN template by metalorganic chemical vapor deposition. Electroluminescence measurements revealed main peak at 373 nm when injection current was 40 mA. Furthermore, cathodeluminescence observed the low-defect density wings emitted 373 run peak and the TELOG coalescence areas emitted 443 nm due to different incorporation of indium, Meanwhile, polarization measurement shown a degree of ultraviolet peak is 28.7%.
URI: http://hdl.handle.net/11536/12401
ISBN: 978-1-4244-1173-3
期刊: 2007 PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS, VOLS 1-4
起始頁: 1276
結束頁: 1277
Appears in Collections:Conferences Paper