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dc.contributor.authorChen, CCen_US
dc.contributor.authorKao, HLen_US
dc.contributor.authorLiao, CCen_US
dc.contributor.authorChin, Aen_US
dc.contributor.authorMcAlister, SPen_US
dc.contributor.authorChi, CCen_US
dc.date.accessioned2014-12-08T15:16:56Z-
dc.date.available2014-12-08T15:16:56Z-
dc.date.issued2006-04-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.45.2992en_US
dc.identifier.urihttp://hdl.handle.net/11536/12413-
dc.description.abstractBoth the coupling and AC power losses in integrated circuit interconnects in the radio-frequency regime have been measured. The AC power loss decreases with decreasing length, decreasing spacing, and increasing inter metal dielectric (IMD) thickness of parallel metal lines. The unwanted signal coupling and cross-talk monotonically decrease with increasing spacing and decreasing length of the parallel metal lines. However, increasing the IMD thickness from 0.7 to 6 mu m improves the low frequency performance but not the maximum operation frequency. Using a high-resistivity Si (HRS) substrate the AC power loss is significantly reduced but is traded off with an increase in coupling loss. The most effective method of reducing both the AC power and coupling losses is the combined use of three dimensional (3D) integration and an HRS, which gives larger than 1-2 orders of magnitude improvement, up to 20 GHz.en_US
dc.language.isoen_USen_US
dc.subjectAC poweren_US
dc.subjectinterconnecten_US
dc.subjectRFen_US
dc.subjectSien_US
dc.subject3Den_US
dc.titleAC power loss and signal coupling in very large scale integration backend interconnectsen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1143/JJAP.45.2992en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERSen_US
dc.citation.volume45en_US
dc.citation.issue4Ben_US
dc.citation.spage2992en_US
dc.citation.epage2996en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000237570600021-
Appears in Collections:Conferences Paper


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