Enhanced light output in InGaN/GaN light emitting diodes with excimer laser etching surfaces

標題:	Enhanced light output in InGaN/GaN light emitting diodes with excimer laser etching surfaces
作者:	Huang, HW Chu, JT Kao, CC Hsueh, TH Lu, TC Kuo, HC Wang, SC Yu, CC Kuo, SY 光電工程學系 Department of Photonics
關鍵字:	gallium nitride (GaN);light-emitting diode (LED);excimer laser
公開日期:	1-四月-2006
摘要:	The InGaN/GaN light-emitting diode (LED) with a top p-GaN surface nanoroughened using Ni nanomasks and laser etching has been fabricated. The light output power of the InGaN/GaN LED with a nanoroughened top p-GaN surface is 1.55-fold that of a conventional LED. The series resistance of InGaN/GaN LED was reduced by 32% due to the increase in the contact area of the nanoroughened surface.
URI:	http://dx.doi.org/10.1143/JJAP.45.3442 http://hdl.handle.net/11536/12416
ISSN:	0021-4922
DOI:	10.1143/JJAP.45.3442
期刊:	JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Volume:	45
Issue:	4B
起始頁:	3442
結束頁:	3445
顯示於類別：	會議論文

文件中的檔案：

若為 zip 檔案，請下載檔案解壓縮後，用瀏覽器開啟資料夾中的 index.html 瀏覽全文。