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dc.contributor.authorNajafi, Ebrahimen_US
dc.contributor.authorScarborough, Timothy D.en_US
dc.contributor.authorTang, Jauen_US
dc.contributor.authorZewail, Ahmeden_US
dc.date.accessioned2015-07-21T08:28:56Z-
dc.date.available2015-07-21T08:28:56Z-
dc.date.issued2015-01-09en_US
dc.identifier.issn0036-8075en_US
dc.identifier.urihttp://dx.doi.org/10.1126/science.aaa0217en_US
dc.identifier.urihttp://hdl.handle.net/11536/124213-
dc.description.abstractThe dynamics of charge transfer at interfaces are fundamental to the understanding of many processes, including light conversion to chemical energy. Here, we report imaging of charge carrier excitation, transport, and recombination in a silicon p-n junction, where the interface is well defined on the nanoscale. The recorded images elucidate the spatiotemporal behavior of carrier density after optical excitation. We show that carrier separation in the p-n junction extends far beyond the depletion layer, contrary to the expected results from the widely accepted drift-diffusion model, and that localization of carrier density across the junction takes place for up to tens of nanoseconds, depending on the laser fluence. The observations reveal a ballistic-type motion, and we provide a model that accounts for the spatiotemporal density localization across the junction.en_US
dc.language.isoen_USen_US
dc.titleFour-dimensional imaging of carrier interface dynamics in p-n junctionsen_US
dc.typeArticleen_US
dc.identifier.doi10.1126/science.aaa0217en_US
dc.identifier.journalSCIENCEen_US
dc.citation.volume347en_US
dc.citation.issue6218en_US
dc.citation.spage164en_US
dc.citation.epage167en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000347918900040en_US
dc.citation.woscount1en_US
Appears in Collections:Articles