Laser Lift-Off Mechanisms of GaN Epi-Layer Grown on Pattern Sapphire Substrate

doi:10.1149/2.0101502jss

標題:	Laser Lift-Off Mechanisms of GaN Epi-Layer Grown on Pattern Sapphire Substrate
作者:	Chang, Tai-Min Fang, Hsin-Kai Liao, Cheng Hsu, Wen-Yang Wu, YewChung Sermon 材料科學與工程學系 Department of Materials Science and Engineering
公開日期:	1-Jan-2015
摘要:	Wafer bonding and laser lift-off (LLO) processes were employed to fabricate pattern sapphire thin-GaN light-emitting diodes LEDs (PT-LED). During the LLO process, the required laser energy for PT-LED was much higher than that for flat thin-GaN LED (FT-LED). The yield rate of PT-LED was low, and the leakage current was high. In this study, the laser lift-off mechanisms of PT-LEDs were investigated. (C) The Author(s) 2014. Published by ECS. All rights reserved.
URI:	http://dx.doi.org/10.1149/2.0101502jss http://hdl.handle.net/11536/124225
ISSN:	2162-8769
DOI:	10.1149/2.0101502jss
期刊:	ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
起始頁:	R20
結束頁:	R22
Appears in Collections:	Articles