標題: Laser Lift-Off Mechanisms of GaN Epi-Layer Grown on Pattern Sapphire Substrate
作者: Chang, Tai-Min
Fang, Hsin-Kai
Liao, Cheng
Hsu, Wen-Yang
Wu, YewChung Sermon
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 1-Jan-2015
摘要: Wafer bonding and laser lift-off (LLO) processes were employed to fabricate pattern sapphire thin-GaN light-emitting diodes LEDs (PT-LED). During the LLO process, the required laser energy for PT-LED was much higher than that for flat thin-GaN LED (FT-LED). The yield rate of PT-LED was low, and the leakage current was high. In this study, the laser lift-off mechanisms of PT-LEDs were investigated. (C) The Author(s) 2014. Published by ECS. All rights reserved.
URI: http://dx.doi.org/10.1149/2.0101502jss
http://hdl.handle.net/11536/124225
ISSN: 2162-8769
DOI: 10.1149/2.0101502jss
期刊: ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
起始頁: R20
結束頁: R22
Appears in Collections:Articles