Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Tu, CH | en_US |
dc.contributor.author | Chang, TC | en_US |
dc.contributor.author | Liu, PT | en_US |
dc.contributor.author | Yang, CY | en_US |
dc.contributor.author | Liu, HC | en_US |
dc.contributor.author | Chen, WR | en_US |
dc.contributor.author | Wu, YC | en_US |
dc.contributor.author | Chang, CY | en_US |
dc.date.accessioned | 2014-12-08T15:16:58Z | - |
dc.date.available | 2014-12-08T15:16:58Z | - |
dc.date.issued | 2006-04-01 | en_US |
dc.identifier.issn | 0741-3106 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/LED.2006.870420 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/12427 | - |
dc.description.abstract | The fluorine ion implantation applied to the polycrystalline silicon thin-film transistors (poly-Si TFTs) is investigated in this letter. Experimental results have shown that fluorine ion implantation effectively minimized the trap state density, leading to superior electrical characteristics such as high field-effect mobility, low threshold voltage, and high ON/OFF current ratio. Furthermore, the fluorine ions tended to segregate at the interface between the gate oxide and poly-Si layers during the excimer laser annealing, even without the extra deposition of pad oxide on the poly-Si film. The presence of fluorine obviously enhanced electrical reliability of poly-Si TFTs. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | fluorine ion implantation | en_US |
dc.subject | polycrystalline silicon thin-film transistors (poly-Si TFTs) | en_US |
dc.title | Improvement of electrical characteristics for fluorine-ion-implanted poly-Si TFTs using ELC | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/LED.2006.870420 | en_US |
dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
dc.citation.volume | 27 | en_US |
dc.citation.issue | 4 | en_US |
dc.citation.spage | 262 | en_US |
dc.citation.epage | 264 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | 顯示科技研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.contributor.department | Department of Photonics | en_US |
dc.contributor.department | Institute of Display | en_US |
dc.identifier.wosnumber | WOS:000236519400019 | - |
dc.citation.woscount | 13 | - |
Appears in Collections: | Articles |
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