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dc.contributor.authorTu, CHen_US
dc.contributor.authorChang, TCen_US
dc.contributor.authorLiu, PTen_US
dc.contributor.authorYang, CYen_US
dc.contributor.authorLiu, HCen_US
dc.contributor.authorChen, WRen_US
dc.contributor.authorWu, YCen_US
dc.contributor.authorChang, CYen_US
dc.date.accessioned2014-12-08T15:16:58Z-
dc.date.available2014-12-08T15:16:58Z-
dc.date.issued2006-04-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2006.870420en_US
dc.identifier.urihttp://hdl.handle.net/11536/12427-
dc.description.abstractThe fluorine ion implantation applied to the polycrystalline silicon thin-film transistors (poly-Si TFTs) is investigated in this letter. Experimental results have shown that fluorine ion implantation effectively minimized the trap state density, leading to superior electrical characteristics such as high field-effect mobility, low threshold voltage, and high ON/OFF current ratio. Furthermore, the fluorine ions tended to segregate at the interface between the gate oxide and poly-Si layers during the excimer laser annealing, even without the extra deposition of pad oxide on the poly-Si film. The presence of fluorine obviously enhanced electrical reliability of poly-Si TFTs.en_US
dc.language.isoen_USen_US
dc.subjectfluorine ion implantationen_US
dc.subjectpolycrystalline silicon thin-film transistors (poly-Si TFTs)en_US
dc.titleImprovement of electrical characteristics for fluorine-ion-implanted poly-Si TFTs using ELCen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2006.870420en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume27en_US
dc.citation.issue4en_US
dc.citation.spage262en_US
dc.citation.epage264en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.identifier.wosnumberWOS:000236519400019-
dc.citation.woscount13-
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