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dc.contributor.authorLin, Shih-Weien_US
dc.contributor.authorWu, Yue-Hanen_US
dc.contributor.authorChang, Lien_US
dc.contributor.authorLiang, Chi-Teen_US
dc.contributor.authorLin, Sheng-Dien_US
dc.date.accessioned2019-04-03T06:41:25Z-
dc.date.available2019-04-03T06:41:25Z-
dc.date.issued2015-02-18en_US
dc.identifier.issn1556-276Xen_US
dc.identifier.urihttp://dx.doi.org/10.1186/s11671-015-0782-xen_US
dc.identifier.urihttp://hdl.handle.net/11536/124320-
dc.description.abstractWe have successfully grown ultrathin continuous aluminum film by molecular beam epitaxy. This percolative aluminum film is single crystalline and strain free as characterized by transmission electron microscopy and atomic force microscopy. The weak anti-localization effect is observed in the temperature range of 1.4 to 10 K with this sample, and it reveals that, for the first time, the dephasing is purely caused by electron-electron inelastic scattering in aluminum.en_US
dc.language.isoen_USen_US
dc.subjectWeak anti-localizationen_US
dc.subjectUltrathin metal filmsen_US
dc.subjectPure electron-electron dephasingen_US
dc.titlePure electron-electron dephasing in percolative aluminum ultrathin film grown by molecular beam epitaxyen_US
dc.typeArticleen_US
dc.identifier.doi10.1186/s11671-015-0782-xen_US
dc.identifier.journalNANOSCALE RESEARCH LETTERSen_US
dc.citation.volume10en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000350566100001en_US
dc.citation.woscount3en_US
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