標題: Significantly Improved Luminescence Properties of Nitrogen-Polar (000(1over bar>)over-bar) InGaN Multiple Quantum Wells Grown by Pulsed Metalorganic Chemical Vapor Deposition
作者: Song, Jie
Chang, Shih-Pang
Zhang, Cheng
Hsu, Ta-Cheng
Han, Jung
光電工程學系
Department of Photonics
關鍵字: N-polar;InGaN MQWs;MOCVD;photoluminescence;mounds
公開日期: 14-一月-2015
摘要: We have demonstrated nitrogen-polar (000 (1) over bar) (N-polar) InGaN multiple quantum wells (MQWs) with significantly improved luminescence properties prepared by pulsed metalorganic chemical vapor deposition. During the growth of InGaN quantum wells, Ga and N sources are alternately injected into the reactor to alter the surface stoichiometry. The influence of flow duration in pulsed growth mode on the luminescence properties has been studied. We find that use of pulsed-mode creates a high density of hexagonal mounds with an increased InGaN growth rate and enhanced In composition around screw-type dislocations, resulting in remarkably improved luminescence properties. The mechanism of enhanced luminescence caused by the hexagonal mounds is discussed. Luminescence properties of N-polar InGaN MQWs grown with short pulse durations have been significantly improved in comparison with a sample grown by a conventional continuous growth method.
URI: http://dx.doi.org/10.1021/am506162z
http://hdl.handle.net/11536/124383
ISSN: 1944-8244
DOI: 10.1021/am506162z
期刊: ACS APPLIED MATERIALS & INTERFACES
起始頁: 273
結束頁: 278
顯示於類別:期刊論文