完整後設資料紀錄
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dc.contributor.authorShih, Yi-Senen_US
dc.contributor.authorLin, Pei-Yien_US
dc.contributor.authorWei, Lin-Lungen_US
dc.contributor.authorChang, Lien_US
dc.date.accessioned2015-07-21T08:28:40Z-
dc.date.available2015-07-21T08:28:40Z-
dc.date.issued2015-01-01en_US
dc.identifier.issn1862-6254en_US
dc.identifier.urihttp://dx.doi.org/10.1002/pssr.201409467en_US
dc.identifier.urihttp://hdl.handle.net/11536/124414-
dc.description.abstractOn semipolar GaN(10 (1) over bar1), epitaxial ZnO grown by chemical vapor deposition consists of two distinct orientations as evidenced by transmission electron microscopy and X-ray diffraction. The initially grown ZnO on GaN follows the GaN lattice with the epitaxial relationship of ZnO(10 (1) over bar1)//GaN(10 (1) over bar1) and ZnO GaN [1 (2) over bar 10](ZnO)//[1 (2) over bar 10](ZnO). The other oriented ZnO domains then grow on faceted (10 (1) over bar1) ZnO with ZnO(0002)//ZnO(10 (1) over bar1) and [(2) over bar 110](ZnO)//[1 (1) over bar0 (1) over bar](ZnO) with good coherency with the (10 (1) over bar1) -oriented grains. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheimen_US
dc.language.isoen_USen_US
dc.subjecttransmission electron microscopyen_US
dc.subjectX-ray diffractionen_US
dc.subjectZnOen_US
dc.subjectthin filmsen_US
dc.subjectGaNen_US
dc.subjectchemical vapor depositionen_US
dc.titleOrientations of ZnO grown on GaN(10(1)over-bar1)en_US
dc.typeArticleen_US
dc.identifier.doi10.1002/pssr.201409467en_US
dc.identifier.journalPHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERSen_US
dc.citation.spage92en_US
dc.citation.epage94en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000348763500016en_US
dc.citation.woscount0en_US
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