標題: | Orientations of ZnO grown on GaN(10(1)over-bar1) |
作者: | Shih, Yi-Sen Lin, Pei-Yi Wei, Lin-Lung Chang, Li 材料科學與工程學系 Department of Materials Science and Engineering |
關鍵字: | transmission electron microscopy;X-ray diffraction;ZnO;thin films;GaN;chemical vapor deposition |
公開日期: | 1-一月-2015 |
摘要: | On semipolar GaN(10 (1) over bar1), epitaxial ZnO grown by chemical vapor deposition consists of two distinct orientations as evidenced by transmission electron microscopy and X-ray diffraction. The initially grown ZnO on GaN follows the GaN lattice with the epitaxial relationship of ZnO(10 (1) over bar1)//GaN(10 (1) over bar1) and ZnO GaN [1 (2) over bar 10](ZnO)//[1 (2) over bar 10](ZnO). The other oriented ZnO domains then grow on faceted (10 (1) over bar1) ZnO with ZnO(0002)//ZnO(10 (1) over bar1) and [(2) over bar 110](ZnO)//[1 (1) over bar0 (1) over bar](ZnO) with good coherency with the (10 (1) over bar1) -oriented grains. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim |
URI: | http://dx.doi.org/10.1002/pssr.201409467 http://hdl.handle.net/11536/124414 |
ISSN: | 1862-6254 |
DOI: | 10.1002/pssr.201409467 |
期刊: | PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS |
起始頁: | 92 |
結束頁: | 94 |
顯示於類別: | 期刊論文 |