標題: Orientations of ZnO grown on GaN(10(1)over-bar1)
作者: Shih, Yi-Sen
Lin, Pei-Yi
Wei, Lin-Lung
Chang, Li
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: transmission electron microscopy;X-ray diffraction;ZnO;thin films;GaN;chemical vapor deposition
公開日期: 1-一月-2015
摘要: On semipolar GaN(10 (1) over bar1), epitaxial ZnO grown by chemical vapor deposition consists of two distinct orientations as evidenced by transmission electron microscopy and X-ray diffraction. The initially grown ZnO on GaN follows the GaN lattice with the epitaxial relationship of ZnO(10 (1) over bar1)//GaN(10 (1) over bar1) and ZnO GaN [1 (2) over bar 10](ZnO)//[1 (2) over bar 10](ZnO). The other oriented ZnO domains then grow on faceted (10 (1) over bar1) ZnO with ZnO(0002)//ZnO(10 (1) over bar1) and [(2) over bar 110](ZnO)//[1 (1) over bar0 (1) over bar](ZnO) with good coherency with the (10 (1) over bar1) -oriented grains. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
URI: http://dx.doi.org/10.1002/pssr.201409467
http://hdl.handle.net/11536/124414
ISSN: 1862-6254
DOI: 10.1002/pssr.201409467
期刊: PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
起始頁: 92
結束頁: 94
顯示於類別:期刊論文