Orientations of ZnO grown on GaN(10(1)over-bar1)

Abstract

On semipolar GaN(10 (1) over bar1), epitaxial ZnO grown by chemical vapor deposition consists of two distinct orientations as evidenced by transmission electron microscopy and X-ray diffraction. The initially grown ZnO on GaN follows the GaN lattice with the epitaxial relationship of ZnO(10 (1) over bar1)//GaN(10 (1) over bar1) and ZnO GaN [1 (2) over bar 10](ZnO)//[1 (2) over bar 10](ZnO). The other oriented ZnO domains then grow on faceted (10 (1) over bar1) ZnO with ZnO(0002)//ZnO(10 (1) over bar1) and [(2) over bar 110](ZnO)//[1 (1) over bar0 (1) over bar](ZnO) with good coherency with the (10 (1) over bar1) -oriented grains. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim