標題: Suppression of endurance degradation by utilizing oxygen plasma treatment in HfO2 resistive switching memory
作者: Chand, Umesh
Huang, Chun-Yang
Jieng, Jheng-Hong
Jang, Wen-Yueh
Lin, Chen-Hsi
Tseng, Tseung-Yuen
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 13-Apr-2015
摘要: Based on the phenomenon of endurance degradation problem caused by no sufficient oxygen ions for resistive switching, we use the oxygen plasma treatment in HfO2 layer to increase the extra available oxygen ions in resistive random access memory devices. To avoid the Ti top electrode directly absorbing the additional oxygen ions from HfO2 layer with oxygen plasma treatment, a thin HfO2 film is inserted to separate them. Therefore, the endurance degradation can be suppressed in the present structure. High speed (30 ns) and large endurance cycles (up to 10(10) cycles) are achieved in this device structure for next generation nonvolatile memory application. (C) 2015 AIP Publishing LLC.
URI: http://dx.doi.org/10.1063/1.4918679
http://hdl.handle.net/11536/124678
ISSN: 0003-6951
DOI: 10.1063/1.4918679
期刊: APPLIED PHYSICS LETTERS
Volume: 106
Issue: 15
Appears in Collections:Articles